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FLL1500IU-2C
L-Band High Power GaAs FET FEATURES
* * * * * Push-Pull Configuration High Power Output: 150W (Typ.) High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation.
DESCRIPTION
The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is well suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
* Solid State Base-Station Power Amplifier. * W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 187.5 -65 to +175 +175 Unit V V W C C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 353 and -103.6 mA respectively with gate resistance of 10. 3. The operating channel temperature (Tch) should not exceed 145C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain Drain Current Power-Added Efficiency Thermal Resistance CASE STYLE: IU Symbol IDSS Vp VGSO Pout GL IDSR add Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 440mA IGS = -4.4mA VDS = 12V f = 2.17 GHz IDS = 4.0A Pin = 43.0dBm Channel to Case Min. -0.1 -5 50.8 11.0 Limits Typ. Max. 16 -0.3 51.8 12.0 23 48 0.55 -0.5 30 0.8 Unit A V V dBm dB A % C/W
Edition 1.1 October 2004
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FLL1500IU-2C
L-Band High Power GaAs FET
ACPR vs. OUTPUT POWER
-25 -30 -35
VDS = 12V IDS = 4.0A fo = 2.14GHz W-CDMA Single Signal
IMD vs. OUTPUT POWER
-35 -40 -45 -50 -55 -60 -65
VDS = 12V IDS = 4.0A f = 2.14GHz f = 1MHz +IM3 +IM5 +IM7
+5M -5M +10M -10M
ACPR (dB)
-45 -50 -55 -60 -65 39 40 41 42 43 44 45 46 47
IMD (dBc)
-40
-70
35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power (dBm)
Output Power (dBm)
OUTPUT POWER vs. FREQUENCY
VDS = 12V IDS = 4.0A Wide Band Tuned
OUTPUT POWER vs. INPUT POWER
52 50
VDS =12V IDS = 4.0A f = 2.17GHz
Output Power (dBm)
52 50
48 46 44 42 40 38
add Pout
60 50 40 30 20 10 26 28 30 32 34 36 38 40 42 0 44
43dBm 42dBm 40dBm 38dBm
Output Power (dBm)
48 46 44 42 40 38
36dBm
34dBm
32dBm
24
30dBm
Input Power (dBm)
28dBm
26dBm
1.99 2.02 2.05 2.08 2.11 2.14 2.17 2.20 2.23 2.26 2.29 2.32
Frequency (GHz)
2
add (%)
FLL1500IU-2C
L-Band High Power GaAs FET
S-PARAMETERS VDS = 12V, IDS = 2000mA FREQUENCY (MHZ)
1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000
S11 MAG ANG
.930 .923 .901 .886 .855 .813 .753 .653 .468 .207 .458 .668 .745 .761 .749 .716 .658 .591 .553 .613 .701 .766 .803 .826 .839 .844 .820 .817 .816 .793 .757 156.2 152.7 148.4 143.9 138.0 131.0 121.1 106.2 77.4 -11.6 -124.0 -162.2 175.8 158.8 142.4 126.3 102.0 66.0 14.6 -39.8 -80.3 -107.6 -126.5 -140.5 -151.8 -161.6 -170.9 -175.9 175.6 167.0 157.5
S21 MAG
.455 .526 .648 .810 1.035 1.351 1.798 2.412 3.261 3.968 3.749 3.006 2.427 2.122 2.049 2.119 2.264 2.434 2.526 2.347 1.765 1.180 .820 .622 .500 .420 .366 .369 .360 .380 .387
S12 ANG MAG
.010 .013 .013 .015 .016 .019 .021 .023 .031 .042 .047 .045 .039 .036 .034 .031 .034 .035 .044 .049 .042 .045 .047 .058 .069 .080 .096 .098 .124 .128 .155
S22 ANG MAG
.892 .875 .850 .823 .796 .763 .738 .721 .677 .520 .369 .429 .502 .535 .548 .534 .500 .455 .405 .400 .480 .595 .694 .772 .822 .858 .880 .898 .900 .905 .904
ANG
161.1 158.4 155.8 153.1 150.7 148.7 146.5 142.2 134.2 125.6 140.7 155.8 154.3 148.2 139.7 130.0 116.1 94.5 59.0 9.0 -39.5 -73.6 -97.2 -114.0 -126.6 -136.9 -145.5 -152.7 -158.8 -164.8 -169.8
54.5 49.4 42.1 31.1 17.1 0.5 -19.6 -43.9 -73.8 -114.9 -158.0 168.6 145.8 127.1 111.2 94.1 71.4 43.1 10.3 -29.3 -67.7 -95.2 -114.6 -127.6 -140.7 -149.7 -156.5 -163.6 -172.0 179.1 166.8
72.9 66.7 60.6 56.1 46.3 28.1 4.2 -33.4 -76.4 -126.2 -176.8 147.0 124.5 100.6 85.9 65.1 37.7 -3.3 -53.7 -90.4 -117.2 -128.4 -127.8 -136.8 -135.3 -145.7 -146.2 -152.4 -157.2 -158.2 -164.5
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs.
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FLL1500IU-2C
L-Band High Power GaAs FET
Case Style "IU"
23.90.25 (0.941) 2.0 MIN. 12-R0.5
1 2
0.1 (0.004)
6
3
2.0 (0.078)
5 4
15.50.15 (0.610)
17.40.15 (0.685)
8.00.15 (0.315)
2.0 MIN.
4-R1.3
1.90.15 (0.075) 2.40.15 (0.094)
10.00.2 (0.393) 30.40.25 (1.181) 34.00.25 (1.339)
4.5 Max. (0.177)
1, 2: 3: 4, 5: 6:
0.70.2
Gate Source Drain Source
Unit: mm (inches)
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111
www.us.eudyna.com
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
Eudyna Devices Inc.
Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170
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